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(R)
STGW30NB60H
N-CHANNEL 30A - 600V TO-247 PowerMESHTM IGBT
T YPE STGW 30NB60H
s
V CES 600 V
V CE(sat) < 2.8 V
IC 30 A
s s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT
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DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 20 20 60 30 240 190 1.52 -65 to 150 150
Unit V V V A A A W W /o C
o o
C C
(*) Pulse width limited by safe operating area
June 1999
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STGW30NB60H
THERMAL DATA
R thj -case R thj -amb R thc-h Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-heatsink Max Max Typ 0.66 30 0.1 C/W oC/W o C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbol V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA
V CE = Max Rating V CE = Max Rating V GE = 20 V
ON ()
Symbol V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Conditions IC = 250 A IC = 30 A IC = 30 A Min. 3 2.2 1.8 Typ. Max. 5 2.8 Unit V V V
Tj = 125 oC
DYNAMIC
Symbol gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current V CE =25 V V CE = 25 V Test Conditions I C = 30 A f = 1 MHz V GE = 0 Min. Typ. 20 2300 250 60 150 15 72 120 Max. Unit S pF pF pF nC nC nC A
V CE = 480 V
IC = 30 A
VGE = 15 V
V clamp = 480 V T j = 150 o C
R G =10
SWITCHING ON
Symbol t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C I C = 30 A R G = 10 I C = 30 A V GE = 15 V Min. Typ. 15 75 760 850 Max. Unit ns ns A/s J
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STGW30NB60H
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbol tc t r (v off ) td (o ff ) tf E o ff(**) E ts tc t r (v off ) td (o ff ) tf E o ff(**) E ts Parameter Test Conditions I C = 30 A V GE = 15 V Min. Typ. 150 40 210 90 1.10 1.8 250 70 250 160 1.6 2.45 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ
Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time VCC = 480 V Off Voltage Rise Time R GE = 10 T j = 125 o C Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss
I C = 30 A V GE = 15 V
(*) Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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STGW30NB60H
Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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STGW30NB60H
Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
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STGW30NB60H
Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3 Switching Waveforms
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STGW30NB60H
TO-247 MECHANICAL DATA
mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
DIM.
P025P
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STGW30NB60H
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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